5SHX2645L0002 3HB012961R0001 Insulated Gate Bipolar Transistor (IGBT) module

5SHX2645L0002 is a Insulated Gate Bipolar Transistor (IGBT) module produced by ABB, with 3HB012961R0001 as its specific order number. It is mainly used in medium-to-high power electronic conversion systems and industrial drive applications. The detailed information is as follows: 

1. Basic Product Overview

2. Key Electrical Specifications

• Rated Voltage (Collector-Emitter Voltage, V₍CE₎₍Rₐₜₑₙₜ₎):
  Typically 1200V DC (common voltage level for industrial IGBT modules, suitable for medium-voltage power conversion scenarios).
• Rated Current (Collector Current, I₍C₎₍Rₐₜₑₙₜ₎):
  Approximately 450A (continuous current rating under standard operating conditions; peak current capability is usually 2-3 times the rated current for short durations).
• Power Dissipation (P₍ₗₒₛₛ₎):
  Typical value ranges from 1.5kW to 2.5kW (varies with operating temperature and switching frequency; requires matching heatsink for heat dissipation).
• Switching Frequency:
  Optimized for medium-frequency applications, generally 1kHz to 20kHz (balances switching losses and conduction efficiency, suitable for industrial drives and inverters).
• Gate Driving Requirements:
  Gate voltage range: Typically ±15V DC (positive voltage for turn-on, negative voltage for reliable turn-off); gate current: 10A to 20A (peak) for fast switching.

3. Performance & Functional Features

• High Power Density:
  Adopts advanced IGBT chip technology and optimized packaging design, enabling high current and voltage ratings in a compact form factor, saving installation space in equipment.
• Low Switching & Conduction Losses:
  Integrates low-loss IGBT chips and anti-parallel freewheeling diodes (FWD), reducing energy loss during operation, improving system efficiency, and lowering heat generation.
• Built-in Protection Mechanisms:
  Equipped with overcurrent protection (OCP) and overtemperature protection (OTP) functions (some versions may include undervoltage lockout (UVLO) for the gate drive), preventing module damage due to abnormal operating conditions.
• Excellent Thermal Stability:
  Uses high-thermal-conductivity substrate materials (e.g., ceramic-aluminum composite substrates) to enhance heat transfer efficiency, ensuring stable performance even in high-temperature industrial environments.

4. Operating Environment

• Operating Temperature Range:
  • Junction temperature (Tⱼ): -40°C to +150°C (maximum allowable temperature for the IGBT chip; actual operation should be controlled below 125°C for long-term reliability).
  • Ambient temperature (Tₐ): -25°C to +85°C (requires auxiliary cooling if ambient temperature exceeds 60°C).
• Humidity:
  5% to 95% relative humidity (non-condensing; avoid moisture intrusion to prevent insulation degradation).
• Isolation Voltage:
  Typically ≥2500V AC (between the power terminal and the baseplate, meeting industrial safety insulation standards).

5. Application Fields

• Industrial AC drives (e.g., high-power motor speed control for pumps, fans, and conveyors).
• Medium-voltage inverters and converters (used in power transmission, renewable energy systems like wind/solar inverters).
• Uninterruptible Power Supplies (UPS) for high-power backup power systems (e.g., data centers, industrial critical loads).
• Welding equipment and induction heating systems (relying on its high current handling and fast switching capabilities).

The company has multiple main brands, and if you have other brand requirements, you can also send them to customer service for inquiry.

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