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5SHY3545L0014 3BHB013085R0001

5SHY3545L0014 3BHB013085R0001 Insulated Gate Bipolar Transistor (IGBT) Module5SH
brand:ABB price:0
Product Details

5SHY3545L0014 3BHB013085R0001 Insulated Gate Bipolar Transistor (IGBT) Module


5SHY3545L0014 is a high-power Insulated Gate Bipolar Transistor (IGBT) Module developed and produced by ABB, with 3BHB013085R0001 as its exclusive order number. It is designed for medium-to-high voltage industrial power conversion systems, featuring high reliability and efficiency, and is widely used in scenarios requiring stable power control. The detailed information is as follows:

1. Basic Product Overview

CategoryDetails
ManufacturerABB (a global leader in power and automation technologies, specializing in industrial semiconductor modules)
Product TypeThree-phase or half-bridge structured IGBT power module (typical for high-power AC-DC/DC-AC conversion)
Order Number3BHB013085R0001 (used for procurement, inventory management, and after-sales service confirmation)
Package TypeIndustrial standard IGBT module package (with a flat baseplate for direct mounting to heatsinks, ensuring efficient thermal conduction)
WeightApproximately 1.2–1.5 kg (varies slightly by packaging; includes terminal hardware for installation)

2. Key Electrical Specifications

  • Rated Voltage (Collector-Emitter Voltage, V₍CE₎ₙₒₘ₋ₘₐₓ₎:
    1700V DC (a common medium-voltage rating for industrial applications, suitable for 690V AC grid-connected systems or medium-voltage inverters).
  • Rated Current (Continuous Collector Current, I₍C₎ₙₒₘ₋ₐₘ₈₅ₒC₎:
    450A (continuous operating current under standard ambient temperature (85°C) and proper heatsinking; peak surge current (I₍Cₚₖ₋ₘₐₓ₎) can reach 900A for short durations (≤10ms)).
  • Power Dissipation (Maximum, P₍ₗₒₛₛ₎ₘₐₓ₎:
    Approximately 3.2kW (varies with switching frequency and junction temperature; requires a high-efficiency heatsink (e.g., water-cooled or forced-air cooled) to maintain thermal balance).
  • Switching Characteristics:
    • Turn-on time (tₒₙ): ~0.5μs; Turn-off time (tₒₓₜ): ~0.8μs (fast switching speed, suitable for medium-frequency applications (2kHz–15kHz)).
    • Switching losses (Eₒₙ/Eₒₓₜ): ~15mJ/25mJ (at rated voltage and current, minimizing energy loss during operation).
  • Gate Drive Requirements:
    • Gate voltage range: +15V (turn-on) / -10V (turn-off) (standard IGBT drive voltage to ensure reliable switching and prevent false triggering).
    • Gate current (peak): 20A–30A (sufficient drive current is required for fast switching of high-current chips).
  • Anti-Parallel Freewheeling Diode (FWD):
    Integrated high-speed FWD with reverse recovery time (tᵣᵣ) ≤50ns, reducing reverse recovery losses and improving system stability.

3. Performance & Functional Features

  • High Power Density:
    Adopts ABB’s advanced IGBT chip technology (e.g., Trench-Gate Field-Stop structure) and compact packaging, achieving a high current rating (450A) in a standard module size, saving installation space in cabinets.
  • Low Loss & High Efficiency:
    The Trench-Gate chip design minimizes conduction losses (on-resistance, R₍CE₎ₒₙ ~2.8mΩ at rated current), while optimized switching waveforms reduce switching losses—overall system efficiency can reach 98%+ in inverter applications.
  • Comprehensive Protection Mechanisms:
    • Overtemperature Protection (OTP): Built-in NTC thermistor (Negative Temperature Coefficient) to monitor junction temperature; triggers an alarm or shutdown when Tⱼ exceeds 150°C.
    • Overcurrent Protection (OCP): Compatible with external current sensors (e.g., shunts or Hall-effect sensors) for fast overcurrent shutdown (response time ≤1μs).
    • Undervoltage Lockout (UVLO): Prevents module damage by disabling switching if the gate drive voltage is below 12V (for turn-on) or above -8V (for turn-off).
  • Enhanced Reliability:
    • Isolation Voltage (Between Power Terminals & Baseplate): ≥4000V AC (1 minute), meeting IEC 60664 safety standards for industrial high-voltage insulation.
    • Robust Packaging: Uses a hermetic ceramic-metal seal to resist moisture, dust, and chemical corrosion, suitable for harsh industrial environments.

4. Operating & Storage Environment

  • Operating Temperature Range:
    • Junction temperature (Tⱼ): -40°C to +150°C (long-term operation is recommended at Tⱼ ≤125°C to extend module lifespan).
    • Ambient temperature (Tₐ): -25°C to +85°C (auxiliary cooling is required if Tₐ exceeds 60°C).
  • Humidity:
    5%–95% relative humidity (non-condensing; avoid exposure to dew or high-moisture environments to prevent insulation breakdown).
  • Vibration & Shock Resistance:
    • Vibration: 5g (10Hz–2000Hz, IEC 60068-2-6 standard).
    • Shock: 50g (11ms, half-sine wave, IEC 60068-2-27 standard), suitable for industrial sites with mechanical vibration (e.g., motor drive cabinets).
  • Storage Conditions:
    Temperature: -40°C to +85°C; Humidity: ≤85% RH (store in a dry, dust-free environment with anti-corrosion packaging).

5. Typical Application Fields

  • Medium-Voltage Industrial Drives: Used in high-power motor speed control systems (e.g., 1MW+ pumps, fans, and compressors in steel, cement, or petrochemical industries).
  • Renewable Energy Inverters: Applied in medium-voltage wind turbine converters (690V/1140V) or large-scale solar PV inverters (for grid connection of megawatt-level PV plants).
  • Uninterruptible Power Supplies (UPS): High-power UPS systems (≥200kVA) for data centers, hospitals, or industrial critical loads, ensuring stable power output during grid outages.
  • Power Quality Equipment: Active Front-End (AFE) converters or Static Var Generators (SVG) to improve grid power factor and suppress harmonic distortion.
  • Induction Heating & Welding Equipment: Medium-frequency induction heating systems (e.g., metal heat treatment) or high-power welding machines, leveraging its high current handling and fast switching capabilities.

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